single phase psb 35 i davm = 35 a rectifier bridge v rrm = 800-1800 v features ? ? package with screw terminals ? isolation voltage 3000 v ? planar glass passivated chips ? blocking voltage up to 1800 v ? low forward voltage drop ? ul registered e 148688 applications ? supplies for dc power equipment ? input rectifier for pwm inverter ? battery dc power supplies ? field supply for dc motors advantages ? easy to mount with two screws ? space and weight savings ? improved temperature and power cycling capability package style and outline dimensions in mm (1mm = 0.0394?) data according to iec 60747 refer to a single diode unless otherwise stated ? 2002 powersem reserves the right to change limits, test conditions and dimensions ~ ~ - + preliminary data sheet powersem gmbh, w alpersdorfer str. 53 d - 91126 schwabach phone: 09122 - 9764 - 0 fax: 09122 - 9764 - 20 symbol test conditions maximum ratings i davm t c = 85 c, (per module) 35 a i fsm t vj = 45 c t = 10 ms (50 hz), sine 400 a v r = 0 t = 8.3 ms (60 hz), sine 440 a t vj = t vjm t = 10 ms (50 hz), sine 360 a v r = 0 t = 8.3 ms (60 hz), sine 400 a i 2 dt t vj = 45 c t = 10 ms (50 hz), sine 800 a2s v r = 0 t = 8.3 ms (60 hz), sine 810 a2s t vj = t vjm t = 10 ms (50 hz), sine 650 a2s v r = 0 t = 8.3 ms (60 hz), sine 670 a2s t vj -40... + 150 c t vjm 150 c t stg -40... + 150 c v isol 50/60 hz, rms t = 1 min 2500 v i isol 1 ma t = 1 s 3000 v m d mounting torque (m4) 1.5 nm terminal connection torque (m4) 1.5 nm weight typ. 105 g symbol test conditions characteristic value i r v r = v rrm, t vj = 25c 0.3 ma v r = v rrm, t vj = t vjm 5 ma v f i f = 150 a, t vj = 25 c 2.2 v v to for power-loss calculations only 0.85 v r t 12 m ? r thjc per diode; dc 2.8 k/w per module 0.7 k/w r thjk per diode; dc 3.4 k/w per module 0.85 k/w d s creeping distance on surface 18.6 mm d a creeping distance in air 18.6 mm a max. allowable acceleration 50 m/s2 v rsm v rrm type (v) (v) 800 800 psb 35/08 1200 1200 psb 35/12 1400 1400 psb 35/14 1600 1600 psb 35/16 1800 1800 psb 35/18
? 2002 powersem reserves the right to change limits, test conditions and dimensions powersem gmbh, w alpersdorfer str. 53 d - 91126 schwabach phone: 09122 - 9764 - 0 fax: 09122 - 9764 - 20 fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current per diode i fsm : crest value. t: duration fig. 3 i 2 dt versus time (1-10ms) per diode (or thyristor) fig. 4 power dissipation versus direct output current and ambient temperature fig.5 maximum forward current at case temperature fig. 6 transient thermal impedance per diode (or thyristor), calculated 0.4 0.6 0.8 1 1.2 1.4 1.6 10 0 10 1 10 2 10 3 t[ms] i (a) fsm tvj=45c tvj=150c 400 360 i ------ i fsm f(ov) 0 v rrm 1/2 v rrm 1 v rrm 2 4 6 10 tvj=45c tvj=150c t [ms] 1 10 10 2 3 as 2 30 10 0 20 40 60 80 50 55 60 65 70 75 80 85 90 95 10 0 10 5 11 0 11 5 12 0 12 5 13 0 13 5 14 0 14 5 15 0 tc c dc sin.180 rec.120 rec.60 rec.30 5.57 2.23 1.12 0.57 0.29 0.01 = rthca [k/w] ifavm [a] tamb [k] 050100150 [w] pvtot psb 35 50 100 150 200 0 10 20 30 40 dc .180 .120 .60 sin rec rec rec.30 t (c) c i dav [a] 0.01 0.1 1 10 1 2 3 4 5 k/w z th t[s] z thjk z thjc ? 1.0 1.5 2.0 2.5 3.0 0 50 100 150 200 v [v] f i f [a] 1:t = 150c vj 2:t = 25c vj 1 2 ?
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